View 1N5820_1107869.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
http://onsemi.com
* * * * * *
Extremely Low VF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction Shipped in plastic bags, 500 per bag Available in Tape and Reel, 1500 per reel, by adding a "RL'' suffix to the part number Pb-Free Packages are Available*
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 1.1 Gram (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead Temperature for Soldering Purposes: *
260C Max. for 10 Seconds Polarity: Cathode indicated by Polarity Band
AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1
Leads are Readily Solderable
MARKING DIAGRAM
A 1N 582x YYWWG G A = Assembly Location 1N582x = Device Code x = 0, 1, or 2 YY = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
1
June, 2006 - Rev. 9
Publication Order Number: 1N5820/D
1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non-Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (Note 1) VR(equiv) v 0.2 VR(dc), TL = 95C (RqJA = 28C/W, P.C. Board Mounting, see Note 5) Ambient Temperature Rated VR(dc), PF(AV) = 0 RqJA = 28C/W Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75C) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5820 20 1N5821 30 1N5822 40 Unit V
24 14
36 21 3.0
48 28
V V A
TA
90
85
80
C
IFSM
80 (for one cycle)
A
TJ, Tstg
65 to +125
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*THERMAL CHARACTERISTICS (Note 5)
Characteristic Thermal Resistance, Junction-to-Ambient Symbol RqJA Max 28 Unit C/W
*ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) (Note 1)
Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25C TL = 100C 1. Lead Temperature reference is cathode lead 1/32 from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820-22. Symbol VF 0.370 0.475 0.850 iR 2.0 20 2.0 20 2.0 20 0.380 0.500 0.900 0.390 0.525 0.950 mA 1N5820 1N5821 1N5822 Unit V
http://onsemi.com
2
1N5820, 1N5821, 1N5822
ORDERING INFORMATION
Device 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5821RLG 1N5822 1N5822G 1N5822RL 1N5822RLG Package Axial Lead Axial Lead (Pb-Free) Axial Lead Axial Lead (Pb-Free) Axial Lead Axial Lead (Pb-Free) Axial Lead Axial Lead (Pb-Free) Axial Lead Axial Lead (Pb-Free) Axial Lead Axial Lead (Pb-Free) Shipping 500 Units/Bag 500 Units/Bag 1500/Tape & Reel 1500/Tape & Reel 500 Units/Bag 500 Units/Bag 1500/Tape & Reel 1500/Tape & Reel 500 Units/Bag 500 Units/Bag 1500/Tape & Reel 1500/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
3
1N5820, 1N5821, 1N5822
NOTE 3 -- DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). TA(max) = TJ(max) * RqJAPF(AV) * RqJAPR(AV)(1) where TA(max) = Maximum allowable ambient temperature TJ(max) = Maximum allowable junction temperature (125C or the temperature at which thermal runaway occurs, whichever is lowest) PF(AV) = Average forward power dissipation PR(AV) = Average reverse power dissipation RqJA = Junction-to-ambient thermal resistance Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). TR = TJ(max) * RqJAPR(AV) Substituting equation (2) into equation (1) yields: TA(max) = TR * RqJAPF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2, and 3 is based upon dc conditions. For
Table 1. Values for Factor F
Circuit Load Sine Wave Square Wave Half Wave Resistive 0.5 0.75 Capacitive* 1.3 1.5 Full Wave, Bridge Resistive 0.5 0.75 Capacitive 0.65 0.75 Full Wave, Center Tapped* Resistive 1.0 1.5 Capacitive 1.3 1.5
use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: VR(equiv) = V(FM) F (4) The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. EXAMPLE: Find TA(max) for 1N5821 operated in a 12-volt dc supply using a bridge circuit with capacitive filter such that IDC = 2.0 A (IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RqJA = 40C/W. Step 1. Find VR(equiv). Read F = 0.65 from Table 1, NVR(equiv) = (1.41) (10) (0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 108C @ VR = 9.2 V and RqJA = 40C/W. Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
@ I (FM) + 10 and I F(AV) + 1.0 A. I(AV)
(2)
Step 4. Find TA(max) from equation (3). TA(max) = 108 * (0.85) (40) = 74C. **Values given are for the 1N5821. Power is slightly lower for the 1N5820 because of its lower forward voltage, and higher for the 1N5822. Variations will be similar for the MBR-prefix devices, using PF(AV) from Figure 6.
*Note that VR(PK) [ 2.0 Vin(PK). Use line to center tap voltage for Vin.
http://onsemi.com
4
1N5820, 1N5821, 1N5822
125 TR , REFERENCE TEMPERATURE ( C) 20 125 10 8.0 TR , REFERENCE TEMPERATURE ( C) 15 20 115 15 10 8.0
115
105 RqJA (C/W) = 70 95 50 40 85 75 2.0 3.0 4.0 5.0 7.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 28
105 RqJA (C/W) = 70 95 50 40 85 75 3.0 4.0 5.0 7.0 10 15 20 30 VR, REVERSE VOLTAGE (VOLTS) 28
Figure 1. Maximum Reference Temperature 1N5820
Figure 2. Maximum Reference Temperature 1N5821
125 TR , REFERENCE TEMPERATURE ( C) 20 115 R qJL , THERMAL RESISTANCE JUNCTION-TO-LEAD ( C/W) 15 10 8.0 105 RqJA (C/W) = 70 50 85 40 28 75 4.0 5.0 7.0 10 15 20 30 40 VR, REVERSE VOLTAGE (VOLTS)
40 35 30 25 20 15 10 5.0 0 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0 L, LEAD LENGTH (INCHES) BOTH LEADS TO HEATSINK, EQUAL LENGTH MAXIMUM TYPICAL
95
Figure 3. Maximum Reference Temperature 1N5822
Figure 4. Steady-State Thermal Resistance
1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL LEAD LENGTH = 1/4
Ppk tp t1
Ppk TIME
DUTY CYCLE = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse.
DTJL = Ppk * RqJL [D + (1 - D) * r(t1 + tp) + r(tp) - r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp, etc. 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k
Figure 5. Thermal Response
http://onsemi.com
5
1N5820, 1N5821, 1N5822
PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IF(AV), AVERAGE FORWARD CURRENT (AMP) TJ 125C
NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL
SINE WAVE I (FM) + p (Resistive Load) I (AV) Capacitive Loads 5.0 10 20
RqS(A) RqL(A) RqJ(A) RqJ(K
)
RqL(K)
RqS(K) TA(K)
dc
TA(A) TL(A) TC(A) TJ
PD TC(K) TL(K)
SQUARE WAVE
Figure 6. Forward Power Dissipation 1N5820-22
Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heatsink to Ambient RqL = Thermal Resistance, Lead-to-Heatsink RqJ = Thermal Resistance, Junction-to-Case PD = Total Power Dissipation = PF + PR PF = Forward Power Dissipation PR = Reverse Power Dissipation (Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 42C/W/in typically and 48C/W/in maximum RqJ = 10C/W typically and 16C/W maximum The maximum lead temperature may be found as follows: TL = TJ(max) * n TJL where n TJL [ RqJL * PD
Mounting Method 1 Mounting Method 3 P.C. Board with 2-1/2, x 2-1/2, copper surface. L = 1/2
NOTE 5 -- MOUNTING DATA
Data shown for thermal resistance junction-to-ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 3 Lead Length, L (in) 1/8 50 58 1/4 51 59 28 1/2 53 61 3/4 55 63 RqJA C/W C/W C/W
P.C. Board where available copper surface is small.
http://onsemi.com
6
EEEEEEEE EEEEEEEE E E E EEEEEEE E EEEEEEE E
Mounting Method 2 L L VECTOR PUSH-IN TERMINALS T-28
L
L
BOARD GROUND PLANE
1N5820, 1N5821, 1N5822
50 IFSM , PEAK HALF-WAVE CURRENT (AMP) 100 70 50 TL = 75C f = 60 Hz 30 20
30 20 TJ = 100C 10 i F, INSTANTANEOUS FORWARD CURRENT (AMP) 7.0 5.0 3.0 2.0 25C
1 CYCLE SURGE APPLIED AT RATED LOAD CONDITIONS
10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 NUMBER OF CYCLES
Figure 8. Maximum Non-Repetitive Surge Current
1.0 0.7 0.5 IR , REVERSE CURRENT (mA) 100 50 20 10 0.3 0.2 5.0 2.0 1.0 0.5 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.05 0.02 0.01 0 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) 500 25C 1N5820 1N5821 1N5822 75C 100C TJ = 125C
0.1 0.07 0.05
Figure 7. Typical Forward Voltage
Figure 9. Typical Reverse Current
1N5820
C, CAPACITANCE (pF)
300
NOTE 6 -- HIGH FREQUENCY OPERATION
200 TJ = 25C f = 1.0 MHz 100 70 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1N5822 20 30 1N5821
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.)
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
http://onsemi.com
7
1N5820, 1N5821, 1N5822
PACKAGE DIMENSIONS
AXIAL LEAD CASE 267-05 (DO-201AD) ISSUE G
K D
1
A
2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 ---
B
K
DIM A B D K
STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
8
1N5820/D

▲Up To Search▲

Price & Availability of 1N5820

	To Download 1N5820 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .